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In the circuit, such as from the switching transient process (cutting off inductive loads, bouncing relay contacts, etc.), it will usually interfere with other electrical and electronic equipment in the same circuit. This kind of interference is characterized by high amplitude, short rise time, high repetition rate and low energy. Clusters of narrow pulses can charge the junction capacitance of semiconductor devices, which may cause circuit or equipment errors when accumulated to a certain extent. The burst generator determines a common reproducible evalsuation basis for evalsuating the performance of power supply ports, signal, control and grounding ports of electrical and electronic equipment when disturbed by electrical fast transient bursts. The products meet the requirements of new standards such as iec61000-4-4, en60100-4-4 and gb/t17626.4.
In the circuit, such as from the switching transient process (cutting off inductive loads, bouncing relay contacts, etc.), it will usually interfere with other electrical and electronic equipment in the same circuit. This kind of interference is characterized by high amplitude, short rise time, high repetition rate and low energy. Clusters of narrow pulses can charge the junction capacitance of semiconductor devices, which may cause circuit or equipment errors when accumulated to a certain extent. The burst generator determines a common reproducible evalsuation basis for evalsuating the performance of power supply ports, signal, control and grounding ports of electrical and electronic equipment when disturbed by electrical fast transient bursts. The products meet the requirements of new standards such as iec61000-4-4, en60100-4-4 and gb/t17626.4.
In the circuit, such as from the switching transient process (cutting off inductive loads, bouncing relay contacts, etc.), it will usually interfere with other electrical and electronic equipment in the same circuit. This kind of interference is characterized by high amplitude, short rise time, high repetition rate and low energy. Clusters of narrow pulses can charge the junction capacitance of semiconductor devices, which may cause circuit or equipment errors when accumulated to a certain extent. The burst generator determines a common reproducible evalsuation basis for evalsuating the performance of power supply ports, signal, control and grounding ports of electrical and electronic equipment when disturbed by electrical fast transient bursts. The products meet the requirements of new standards such as iec61000-4-4, en60100-4-4 and gb/t17626.4.
In the circuit, such as from the switching transient process (cutting off inductive loads, bouncing relay contacts, etc.), it will usually interfere with other electrical and electronic equipment in the same circuit. This kind of interference is characterized by high amplitude, short rise time, high repetition rate and low energy. Clusters of narrow pulses can charge the junction capacitance of semiconductor devices, which may cause circuit or equipment errors when accumulated to a certain extent. The burst generator determines a common reproducible evalsuation basis for evalsuating the performance of power supply ports, signal, control and grounding ports of electrical and electronic equipment when disturbed by electrical fast transient bursts. The products meet the requirements of new standards such as iec61000-4-4, en60100-4-4 and gb/t17626.4.
The capacitive coupling clamp can couple the fast transient pulse group to the tested line without any electrical connection with the terminal of the tested equipment port, cable shield or any other part of the tested equipment. The capacitive coupling clamp is used in conjunction with the electric fast transient pulse group generator to superimpose interference on the input, output, control line and data line of the equipment to conduct the system anti-interference test. Comply with the standard requirements of iec61000-4-4 and gb/t17626.4.
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Sales Hotline：400-021-6779
Switchboard：021-67727150
3255 Shengang Road, Songjiang Industrial Zone, Shanghai
2F, building 11
Silicon valley power, No. 416, Xuegang North Road, Longhua District, Shenzhen
2nd floor, building A4, Qinghu Park
No. 3, Rongjing East Street, Yizhuang Economic Development Zone, Beijing
Room a1821, Lido, Rongjing
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